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1

GaN epitaxial growth on sapphire (0 0 0 1): the role of the substrate nitridation

N. Grandjean, J. Massies, Y. Martinez, P. Vennéguès, M. Leroux, M. Laügt

Journal:

Journal of Crystal Growth

Year:

1997

Language:

english

File:

PDF, 900 KB

english, 1997

2

Microstructural analysis of III–V nitrides grown on 6H–SiC by metal–organic vapour phase epitaxy (MOVPE)

Lahreche, H, Vaille, M, Vennéguès, P, Laügt, M, Beaumont, B, Gibart, P

Journal:

Diamond and Related Materials

Year:

2000

Language:

english

File:

PDF, 341 KB

english, 2000

3

Structural changes in metastable epitaxial Co/Mn superlattices

Ounadjela, K., Vennegues, P., Henry, Y., Michel, A., Pierron-Bohnes, V., Arabski, J.

Journal:

Physical Review B

Year:

1994

Language:

english

File:

PDF, 1.11 MB

english, 1994

4

On the morphologies of oxides particles in optical fibers: Effect of the drawing tension and composition

Vermillac, M., Fneich, H., Turlier, J., Cabié, M., Kucera, C., Borschneck, D., Peters, F., Vennéguès, P., Neisius, T., Chaussedent, S., Neuville, D.R., Mehdi, A., Ballato, J., Blanc, W.

Journal:

Optical Materials

Year:

2018

Language:

english

File:

PDF, 2.27 MB

english, 2018

5

TEM Study of the Behavior of Dislocations during ELO of GaN

V. Bousquet, P. Vennéguès, B. Beaumont, M. Vaille, P. Gibart

Journal:

physica status solidi (b)

Year:

1999

Language:

english

File:

PDF, 263 KB

english, 1999

6

Metal Organic Vapour Phase Epitaxy (MOVPE) Growth of GaN(n)/SiC(p) Heterostructures

H. Lahrèche, M. Vaille, B. Beaumont, M. Laügt, P. Vennéguès, P. Gibart

Journal:

physica status solidi (a)

Year:

1999

Language:

english

File:

PDF, 171 KB

english, 1999

7

A Two-Step Method for Epitaxial Lateral Overgrowth of GaN

B. Beaumont, V. Bousquet, P. Vennéguès, M. Vaille, A. Bouillé, P. Gibart, S. Dassonneville, A. Amokrane, B. Sieber

Journal:

physica status solidi (a)

Year:

1999

Language:

english

File:

PDF, 207 KB

english, 1999

8

Optimization of Si/N Treatment Time of Sapphire Surface and Its Effect on the MOVPE GaN Overlayers

S. Haffouz, B. Beaumont, P. Vennéguès, P. Gibart

Journal:

physica status solidi (a)

Year:

1999

Language:

english

File:

PDF, 247 KB

english, 1999

9

Epitaxial Lateral Overgrowth of GaN

B. Beaumont, Ph. Vennéguès, P. Gibart

Journal:

physica status solidi (b)

Year:

2001

Language:

english

File:

PDF, 1.99 MB

english, 2001

10

2D versus 3D Growth Mode in ZnO Layers Grown by Plasma-Enhanced Molecular Beam Epitaxy on (0001) Sapphire

F. Vigué, C. Deparis, P. Vennéguès, S. Vézian, M. Laügt, P. Lorenzini, C. Morhain, F. Raymond, J. Guion, J.P. Faurie

Journal:

physica status solidi (b)

Year:

2002

Language:

english

File:

PDF, 92 KB

english, 2002

11

Crack-Free Thick GaN Layers on Silicon (111) by Metalorganic Vapor Phase Epitaxy

E. Feltin, B. Beaumont, M. Laügt, P. de Mierry, P. Vennéguès, M. Leroux, P. Gibart

Journal:

physica status solidi (a)

Year:

2001

Language:

english

File:

PDF, 148 KB

english, 2001

12

Epitaxial Lateral Overgrowth of GaN on Silicon (111)

E. Feltin, B. Beaumont, P. Vennéguès, T. Riemann, J. Christen, J.P. Faurie, P. Gibart

Journal:

physica status solidi (a)

Year:

2001

Language:

english

File:

PDF, 444 KB

english, 2001

13

Study of (Al,Ga)N Bragg Mirrors Grown on Al2O3(0001) and Si(111) by Metalorganic Vapor Phase Epitaxy

H.P.D. Schenk, E. Feltin, P. Vennéguès, O. Tottereau, M. Laügt, M. Vaille, B. Beaumont, P. de Mierry, P. Gibart, S. Fernández, F. Calle

Journal:

physica status solidi (a)

Year:

2001

Language:

english

File:

PDF, 129 KB

english, 2001

14

High-Quality Distributed Bragg Reflectors for Resonant-Cavity Light-Emitting Diode Applications

S. Fernández, F.B. Naranjo, F. Calle, M.A. Sánchez-García, E. Calleja, P. Vennéguès

Journal:

physica status solidi (a)

Year:

2002

Language:

english

File:

PDF, 309 KB

english, 2002

15

Structural Defects and Relation with Optoelectronic Properties in Highly Mg-Doped GaN

M. Leroux, P. Vennéguès, S. Dalmasso, M. Benaissa, E. Feltin, P. de Mierry, B. Beaumont, B. Damilano, N. Grandjean, P. Gibart

Journal:

physica status solidi (a)

Year:

2002

Language:

english

File:

PDF, 207 KB

english, 2002

16

Molecular beam epitaxy of GaSbAlxGa1 − xSb quantum well structures

J. Massies, M. Leroux, Y. Martinez, P. Vennegues, S. Laügt

Journal:

Journal of Crystal Growth

Year:

1996

Language:

english

File:

PDF, 694 KB

english, 1996

17

Catalytic unzipping of carbon nanotubes to few-layer graphene sheets under microwaves irradiation

Izabela Janowska, Ovidiu Ersen, Timo Jacob, Philippe Vennégues, Dominique Bégin, Marc-Jacques Ledoux, Cuong Pham-Huu

Journal:

Applied Catalysis A: General

Year:

2009

Language:

english

File:

PDF, 1023 KB

english, 2009

18

Physical characterization of molybdenum oxycarbide catalyst; TEM, XRD and XPS

Pascale Delporte, Fre´de´ric Meunier, Cuong Pham-Huu, Philippe Vennegues, Marc J. Ledoux, Jean Guille

Journal:

Catalysis Today

Year:

1995

Language:

english

File:

PDF, 2.21 MB

english, 1995

19

Polarity inversion of GaN(0 0 0 1) by a high Mg doping

S. Pezzagna, P. Vennéguès, N. Grandjean, J. Massies

Journal:

Journal of Crystal Growth

Year:

2004

Language:

english

File:

PDF, 392 KB

english, 2004

20

AlGaN/GaN/AlGaN DH-HEMTs grown by MBE on Si(1 1 1)

Y. Cordier, F. Semond, M. Hugues, F. Natali, P. Lorenzini, H. Haas, S. Chenot, M. Laügt, O. Tottereau, P. Vennegues, J. Massies

Journal:

Journal of Crystal Growth

Year:

2005

Language:

english

File:

PDF, 216 KB

english, 2005

21

Hexagonal c-axis GaN layers grown by metalorganic vapor-phase epitaxy on Si(0 0 1)

Sylvain Joblot, Eric Feltin, Emmanuel Beraudo, Philippe Vennéguès, Mathieu Leroux, Franck Omnès, Marguerite Laügt, Yvon Cordier

Journal:

Journal of Crystal Growth

Year:

2005

Language:

english

File:

PDF, 684 KB

english, 2005

22

Growth of non-polar ZnO/(Zn,Mg)O quantum well structures on R-sapphire by plasma-assisted molecular beam epitaxy

J.-M. Chauveau, D.A. Buell, M. Laügt, P. Vennéguès, M. Teisseire-Doninelli, S. Berard-Bergery, C. Deparis, B. Lo, B. Vinter, C. Morhain

Journal:

Journal of Crystal Growth

Year:

2007

Language:

english

File:

PDF, 279 KB

english, 2007

23

Strain engineering in GaN layers grown on silicon by molecular beam epitaxy: The critical role of growth temperature

Y. Cordier, N. Baron, S. Chenot, P. Vennéguès, O. Tottereau, M. Leroux, F. Semond, J. Massies

Journal:

Journal of Crystal Growth

Year:

2009

Language:

english

File:

PDF, 420 KB

english, 2009

24

Stacking faults blocking process in (1 1 −2 2) semipolar GaN growth on sapphire using asymmetric lateral epitaxy

N. Kriouche, P. Vennéguès, M. Nemoz, G. Nataf, P. De Mierry

Journal:

Journal of Crystal Growth

Year:

2010

Language:

english

File:

PDF, 920 KB

english, 2010

25

Structural and electronic properties of ZnMgO/ZnO quantum wells

C. Morhain, X. Tang, M. Teisseire-Doninelli, B. Lo, M. Laügt, J.-M. Chauveau, B. Vinter, O. Tottereau, P. Vennéguès, C. Deparis, G. Neu

Journal:

Superlattices and Microstructures

Year:

2005

Language:

english

File:

PDF, 2.02 MB

english, 2005

26

AlGaN/GaN HEMTs grown on silicon (001) substrates by molecular beam epitaxy

S. Joblot, Y. Cordier, F. Semond, S. Chenot, P. Vennéguès, O. Tottereau, P. Lorenzini, J. Massies

Journal:

Superlattices and Microstructures

Year:

2006

Language:

english

File:

PDF, 353 KB

english, 2006

27

Optimisation of AlN and GaN growth by metalorganic vapour-phase epitaxy (MOVPE) on Si (1 1 1)

H Lahrèche, P Vennéguès, O Tottereau, M Laügt, P Lorenzini, M Leroux, B Beaumont, P Gibart

Journal:

Journal of Crystal Growth

Year:

2000

Language:

english

File:

PDF, 1.15 MB

english, 2000

28

Structural properties of maskless epitaxial lateral overgrown MOCVD GaN layers on Si (1 1 1) substrates

S. Haffouz, A. Grzegorczyk, P.R. Hageman, P. Vennégu≐s, E.W.J.M. van der Drift, P.K. Larsen

Journal:

Journal of Crystal Growth

Year:

2003

Language:

english

File:

PDF, 441 KB

english, 2003

29

Control of the polarity of GaN films using an Mg adsorption layer

N. Grandjean, A. Dussaigne, S. Pezzagna, P. Vennéguès

Journal:

Journal of Crystal Growth

Year:

2003

Language:

english

File:

PDF, 825 KB

english, 2003

30

Three-dimensionally nucleated growth of gallium nitride by low-pressure metalorganic vapour phase epitaxy

H.P.D. Schenk, P. Vennéguès, O. Tottereau, T. Riemann, J. Christen

Journal:

Journal of Crystal Growth

Year:

2003

Language:

english

File:

PDF, 888 KB

english, 2003

31

Microstructure of GaN epitaxial films at different stages of the growth process on sapphire (0 0 0 1)

P. Vennegues, B. Beaumont, M. Vaille, P. Gibart

Journal:

Journal of Crystal Growth

Year:

1997

Language:

english

File:

PDF, 750 KB

english, 1997

32

Microstructural study of pseudomorphic ZnSe films grown on bare GaAs substrates

P. Vennéguès, B. Muller, V. Bousquet, C. Ongaretto, E. Tournié, J.P. Faurie

Journal:

Journal of Crystal Growth

Year:

1997

Language:

english

File:

PDF, 1.04 MB

english, 1997

33

Influence of in situ sapphire surface preparation and carrier gas on the growth mode of GaN in MOVPE

P Vennéguès, B Beaumont, S Haffouz, M Vaille, P Gibart

Journal:

Journal of Crystal Growth

Year:

1998

Language:

english

File:

PDF, 1001 KB

english, 1998

34

Effect of the nucleation layer deposition temperature on the nature of defects in GSMBE GaN films

P Vennéguès, N Grandjean, J Massies, F Semond

Journal:

Journal of Crystal Growth

Year:

1999

Language:

english

File:

PDF, 957 KB

english, 1999

35

Investigations by high-resolution X-ray diffraction (HRXRD) and transmission electron microscopy (TEM) of (BeTe/ZnSe) superlattices grown by molecular beam epitaxy onto GaAs buffer epilayer

V Bousquet, M Laügt, P Vennéguès, E Tournié, J.-P Faurie

Journal:

Journal of Crystal Growth

Year:

1999

Language:

english

File:

PDF, 265 KB

english, 1999

36

Molecular-beam epitaxy of ZnxBe1−xSe layers on vicinal Si(0 0 1) substrates

C Chauvet, C Guénaud, P Vennéguès, E Tournié, J.P Faurie

Journal:

Journal of Crystal Growth

Year:

1999

Language:

english

File:

PDF, 648 KB

english, 1999

37

Growth of high-quality GaN by low-pressure metal-organic vapour phase epitaxy (LP-MOVPE) from 3D islands and lateral overgrowth

H Lahrèche, P Vennéguès, B Beaumont, P Gibart

Journal:

Journal of Crystal Growth

Year:

1999

Language:

english

File:

PDF, 991 KB

english, 1999

38

Influence of high Mg doping on the microstructural and optoelectronic properties of GaN

P Vennéguès, M Benaissa, S Dalmasso, M Leroux, E Feltin, P De Mierry, B Beaumont, B Damilano, N Grandjean, P Gibart

Journal:

Materials Science and Engineering: B

Year:

2002

Language:

english

File:

PDF, 221 KB

english, 2002

39

Microstructural studies of GaN grown on (0001) sapphire by MOVPE

P. Vennegues, B. Beaumont, P. Gibart

Journal:

Materials Science and Engineering: B

Year:

1997

Language:

english

File:

PDF, 698 KB

english, 1997

40

Luminescence and reflectivity studies of undoped, n- and p-doped GaN on (0001) sapphire

M Leroux, B Beaumont, N Grandjean, P Lorenzini, S Haffouz, P Vennéguès, J Massies, P Gibart

Journal:

Materials Science and Engineering: B

Year:

1997

Language:

english

File:

PDF, 274 KB

english, 1997

41

High quality ELO-GaN layers on GaN/Al2O3 patterned substrates by halide vapour phase epitaxy

G. Nataf, B. Beaumont, A. Bouillé, P. Vennéguès, S. Haffouz, M. Vaille, P. Gibart

Journal:

Materials Science and Engineering: B

Year:

1999

Language:

english

File:

PDF, 1.79 MB

english, 1999

42

Sub-bandgap optical absorption of MOVPE-GaN grown under controlled nucleation.

P de Mierry, H Lahreche, S Haffouz, P Vennéguès, B Beaumont, F Omnès, P Gibart

Journal:

Materials Science and Engineering: B

Year:

1999

Language:

english

File:

PDF, 892 KB

english, 1999

43

Reduction of stacking faults in (110) and (112) GaN films by ELO techniques and benefit on GaN wells emission

Z. Bougrioua, M. Laügt, P. Vennéguès, I. Cestier, T. Gühne, E. Frayssinet, P. Gibart, M. Leroux

Journal:

physica status solidi (a)

Year:

2007

Language:

english

File:

PDF, 517 KB

english, 2007

44

Growth of wurtzite-GaN on silicon (100) substrate by molecular beam epitaxy

S. Joblot, F. Semond, F. Natali, P. Vennéguès, M. Laügt, Y. Cordier, J. Massies

Journal:

physica status solidi (c)

Year:

2005

Language:

english

File:

PDF, 254 KB

english, 2005

45

Investigation of growth mechanisms of GaN quantum dots on (0001)AlN surface by ammonia MBE

V. G. Mansurov, Yu. G. Galitsyn, A. Yu. Nikitin, K. S. Zhuravlev, Ph. Vennegues

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 324 KB

english, 2006

46

Characterization of structural defects in (110) GaN films grown on (102) sapphire substrates

P. Vennéguès, F. Mathal, Z. Bougrioua

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 448 KB

english, 2006

47

High indium content AlInGaN films: growth, structure and optoelectronic properties

M. Nemoz, E. Beraudo, P. De Mierry, P. Vennéguès, L. Hirsch

Journal:

physica status solidi (c)

Year:

2007

Language:

english

File:

PDF, 341 KB

english, 2007

48

AlInN optical confinement layers for edge emitting group III-nitride laser structures

H. P. D. Schenk, M. Nemoz, M. Korytov, P. Vennéguès, P. Demolon, A. D. Dräger, A. Hangleiter, R. Charash, P. P. Maaskant, B. Corbett, J. Y. Duboz

Journal:

physica status solidi (c)

Year:

2009

Language:

english

File:

PDF, 294 KB

english, 2009

49

Interfacial properties of thermally oxidized Ta2Si on Si

A. Pérez-Tomás, M. R. Jennings, P. A. Mawby, J. Millán, P. Godignon, J. Montserrat, E. Rossinyol, P. Vennegues, J. Stoemenos

Journal:

Surface and Interface Analysis

Year:

2008

Language:

english

File:

PDF, 228 KB

english, 2008

50

Growth and characterization of A-plane ZnO and ZnCoO based heterostructures

J.-M. Chauveau, C. Morhain, B. Lo, B. Vinter, P. Vennéguès, M. Laügt, D. Buell, M. Tesseire-Doninelli, G. Neu

Journal:

Applied Physics A: Materials Science & Processing

Year:

2007

Language:

english

File:

PDF, 382 KB

english, 2007

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